Selective growth of α-sexithiophene by using silicon oxides patterns.
A process for fabricating ordered organic films on large area is presented. The process allows growing sexithiophene ultra-thin films at precise locations on patterned Si/SiO(x) substrates by driving the orientation of growth. This process combines the parallel local anodic oxidation of Si/SiO(x) substrates with the selective arrangement of molecular ultra-thin film. The former is used to fabricate silicon oxide arrays of parallel lines of 400 nm in width over an area of 1 cm(2). Selective growth arises from the interplay between kinetic growth parameters and preferential interactions with the patterned surface. The result is an ultra-thin film of organic molecules that is conformal to the features of the fabricated motives.
['Albonetti|Cristiano|C|', 'Barbalinardo|Marianna|M|', 'Milita|Silvia|S|', 'Cavallini|Massimiliano|M|', 'Liscio|Fabiola|F|', 'Moulin|Jean-François|JF|', 'Biscarini|Fabio|F|']
D018360:Crystallography, X-Ray D004558:Electric Stimulation D006576:Heterocyclic Compounds, 4 or More Rings D018625:Microscopy, Atomic Force D049329:Nanostructures D010084:Oxidation-Reduction D010087:Oxides D053838:Scattering, Small Angle D017655:Silicon Compounds D013499:Surface Properties D013816:Thermodynamics D013876:Thiophenes D014961:X-Ray Diffraction
pattern sexithiophene annealing atomic force microscopy template