Line patterns from cylinder-forming photocleavable block copolymers.
A robust route for the preparation of nanoscopic line patterns from polystyrene-block-poly(ethylene oxide) featuring a photocleavable o-nitrobenzyl ester junction is demonstrated. After mild UV (λ = 365 nm) exposure and selective removal of the PEO microdomains, the polymer trench patterns are used as scaffold to fabricate highly ordered arrays of silica or Au line patterns.
['Gu|Weiyin|W|', 'Zhao|Hui|H|', 'Wei|Qingshuo|Q|', 'Coughlin|E Bryan|EB|', 'Theato|Patrick|P|', 'Russell|Thomas P|TP|']
line patterns photocleavable block copolymers nanotemplates self-assembly