Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes.
This paper addressed the effect of post-annealed treatment on the electroluminescence (EL) of an n-ZnO/p-GaN heterojunction light-emitting diode (LED). The bluish light emitted from the 450 °C-annealed LED became reddish as the LED annealed at a temperature of 800 °C under vacuum atmosphere. The origins of the light emission for these LEDs annealed at various temperatures were studied using measurements of electrical property, photoluminescence, and Auger electron spectroscopy (AES) depth profiles. A blue-violet emission located at 430 nm was associated with intrinsic transitions between the bandgap of n-ZnO and p-GaN, the green-yellow emission at 550 nm mainly originating from the deep-level transitions of native defects in the n-ZnO and p-GaN surfaces, and the red emission at 610 nm emerging from the Ga-O interlayer due to interdiffusion at the n-ZnO/p-GaN interface. The above-mentioned emissions also supported the EL spectra of LEDs annealed at 700 °C under air, nitrogen, and oxygen atmospheres, respectively.
['Hsu|Kai-Chiang|KC|', 'Hsiao|Wei-Hua|WH|', 'Lee|Ching-Ting|CT|', 'Chen|Yan-Ting|YT|', 'Liu|Day-Shan|DS|']
electroluminescence light-emitting diode n-ZnO/p-GaN heterojunction photoluminescence AES depth profile