Yb:MoO3/Ag/MoO3 Multilayer Transparent Top Cathode for Top-Emitting Green Quantum Dot Light-Emitting Diodes.
In this study, we report on the application of a dielectric/ultra-thin metal/dielectric (DMD) multilayer consisting of ytterbium (Yb)-doped molybdenum oxide (MoO3)/silver (Ag)/MoO3 stacked as the transparent cathode in top-emitting green quantum dot light-emitting diodes (QLED). By optimizing the Yb doping ratio, we have highly improved the electron injection ability from 0.01 to 0.35. In addition, the dielectric/ultra-thin metal/dielectric (DMD) cathode also shows a low sheet resistance of only 12.2 Ω/sq, which is superior to the resistance of the commercially-available indium tin oxide (ITO) electrode (~15 Ω/sq). The DMD multilayer exhibits a maximum transmittance of 75% and an average transmittance of 70% over the visible range of 400-700 nm. The optimized DMD-based G-QLED has a smaller current leakage at low driving voltage. The optimized DMD-based G-QLED enhances the current density than that of G-QLED with indium zinc oxide (IZO) as a cathode. The fabricated DMD-based G-QLED shows a low turn-on voltage of 2.2 V, a high current efficiency of 38 cd/A, and external quantum efficiency of 9.8. These findings support the fabricated DMD multilayer as a promising cathode for transparent top-emitting diodes.
['Lee|Chun-Yu|CY|', 'Chen|Yi-Min|YM|', 'Deng|Yao-Zong|YZ|', 'Kuo|Ya-Pei|YP|', 'Chen|Peng-Yu|PY|', 'Tsai|Leo|L|', 'Lin|Ming-Yi|MY|']
DMD transparent cathode QLEDs top-emission