Improvement of J(sc) in a Cu2ZnSnS4 Solar Cell by Using a Thin Carbon Intermediate Layer at the Cu2ZnSnS4/Mo Interface.
Back contact modification plays an important role in improving energy conversion efficiency of Cu2ZnSnS4 (CZTS) thin film solar cells. In this paper, an ultrathin carbon layer is introduced on molybdenum (Mo)-coated soda lime glass (SLG) prior to the deposition of CZTS precursor to improve the back contact and therefore enhance CZTS solar cell efficiency. By introducing this layer, the short circuit current (Jsc) and device conversion efficiency increase for both nonvacuum (sol-gel) and vacuum (sputtering) methods. Specifically, for the sol-gel based process, Jsc increases from 13.60 to 16.96 mA/cm(2) and efficiency from 4.47% to 5.52%, while for the sputtering based process, Jsc increases from 17.50 to 20.50 mA/cm(2) and efficiency from 4.10% to 5.20%. Furthermore, introduction of this layer does not lead to any deterioration of either open circuit voltage (Voc) or fill factor (FF).
['Zhou|Fangzhou|F|', 'Zeng|Fangqin|F|', 'Liu|Xu|X|', 'Liu|Fangyang|F|', 'Song|Ning|N|', 'Yan|Chang|C|', 'Pu|Aobo|A|', 'Park|Jongsung|J|', 'Sun|Kaiwen|K|', 'Hao|Xiaojing|X|']
solar cells carbon back contact Cu2ZnSnS4 (CZTS) thin film kesterite