Quantum-Transport Characteristics of a p-n Junction on Single-Layer TiS3.
By using density functional theory and non-equilibrium Green's function-based methods, we investigated the electronic and transport properties of a TiS3 monolayer p-n junction. We constructed a lateral p-n junction on a TiS3 monolayer using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS3 p-n junction. In addition, the spin-dependent current-voltage characteristics of the constructed TiS3 p-n junction were analyzed. Important device characteristics were found, such as negative differential resistance and rectifying diode behaviors for spin-polarized currents in the TiS3 p-n junction. These prominent conduction properties of the TiS3 p-n junction offer remarkable opportunities for the design of nanoelectronic devices based on a recently synthesized single-layered material.
['Iyikanat|Fadil|F|http://orcid.org/0000-0003-1786-3235', 'Senger|Ramazan T|RT|', 'Peeters|Francois M|FM|', 'Sahin|Hasan|H|']
p-n junctions monolayers ab initio calculations doping electron transfer