Extreme Sensitivity of Room-Temperature Photoelectric Effect for Terahertz Detection.
Extreme sensitivity of room-temperature photoelectric effect for terahertz (THz) detection is demonstrated by generating extra carriers in an electromagnetic induced well located at the semiconductor, using a wrapped metal-semiconductor-metal configuration. The excellent performance achieved with THz detectors shows great potential to open avenues for THz detection.
['Huang|Zhiming|Z|', 'Zhou|Wei|W|', 'Tong|Jinchao|J|', 'Huang|Jingguo|J|', 'Ouyang|Cheng|C|', 'Qu|Yue|Y|', 'Wu|Jing|J|', 'Gao|Yanqing|Y|', 'Chu|Junhao|J|']
photoelectric effect terahertz detection electromagnetic induced wells