Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film.
We report the properties of a series of electrodeposited Ge-Sb-Te alloys with various compositions. It is shown that the Sb/Ge ratio can be varied in a controlled way by changing the electrodeposition potential. This method opens up the prospect of depositing Ge-Sb-Te super-lattice structures by electrodeposition. Material and electrical characteristics of various compositions have been investigated in detail, showing up to three orders of magnitude resistance ratio between the amorphous and crystalline states and endurance up to 1000 cycles.
['Huang|Ruomeng|R|', 'Kissling|Gabriela P|GP|', 'Jolleys|Andrew|A|', 'Bartlett|Philip N|PN|', 'Hector|Andrew L|AL|', 'Levason|William|W|', 'Reid|Gillian|G|', "De Groot|C H 'Kees'|CH|"]
Phase-change memory Electrodeposition Ge-Sb-Te