InxGa1-xP Nanowire Growth Dynamics Strongly Affected by Doping Using Diethylzinc.
Semiconductor nanowires are versatile building blocks for optoelectronic devices, in part because nanowires offer an increased freedom in material design due to relaxed constraints on lattice matching during the epitaxial growth. This enables the growth of ternary alloy nanowires in which the bandgap is tunable over a large energy range, desirable for optoelectronic devices. However, little is known about the effects of doping in the ternary nanowire materials, a prerequisite for applications. Here we present a study of p-doping of InxGa1-xP nanowires and show that the growth dynamics are strongly affected when diethylzinc is used as a dopant precursor. Specifically, using in situ optical reflectometry and high-resolution transmission electron microscopy we show that the doping results in a smaller nanowire diameter, a more predominant zincblende crystal structure, a more Ga-rich composition, and an increased axial growth rate. We attribute these effects to changes in seed particle wetting angle and increased TMGa pyrolysis efficiency upon introducing diethylzinc. Lastly, we demonstrate degenerate p-doping levels in InxGa1-xP nanowires by the realization of an Esaki tunnel diode. Our findings provide insights into the growth dynamics of ternary alloy nanowires during doping, thus potentially enabling the realization of such nanowires with high compositional homogeneity and controlled doping for high-performance optoelectronics devices.
['Otnes|Gaute|G|0000-0002-4241-5234', 'Heurlin|Magnus|M|', 'Zeng|Xulu|X|', 'Borgström|Magnus T|MT|']
D003460:Crystallization D005708:Gallium D007204:Indium D036103:Nanotechnology D053770:Nanowires D009942:Organometallic Compounds D010316:Particle Size D010758:Phosphorus D012666:Semiconductors D013499:Surface Properties
Nanowire doping crystal structure InGaP MOVPE ternary compound