Chemical Doping Effects in Multilayer MoS2 and Its Application in Complementary Inverter.
Multilayer MoS2 has been gaining interest as a new semiconducting material for flexible displays, memory devices, chemical/biosensors, and photodetectors. However, conventional multilayer MoS2 devices have exhibited limited performances due to the Schottky barrier and defects. Here, we demonstrate poly(diketopyrrolopyrrole-terthiophene) (PDPP3T) doping effects in multilayer MoS2, which results in improved electrical characteristics (∼4.6× higher on-current compared to the baseline and a high current on/off ratio of 106). Synchrotron-based study using X-ray photoelectron spectroscopy and grazing incidence wide-angle X-ray diffraction provides mechanisms that align the edge-on crystallites (97.5%) of the PDPP3T as well as a larger interaction with MoS2 that leads to dipole and charge transfer effects (at annealing temperature of 300 °C), which support the observed enhancement of the electrical characteristics. Furthermore, we demonstrate a complementary metal-oxide-semiconductor inverter that uses a p-type MoSe2 and a PDPP3T-doped MoS2 as charging and discharging channels, respectively.
['Yoo|Hocheon|H|', 'Hong|Seongin|S|', 'On|Sungmin|S|', 'Ahn|Hyungju|H|', 'Lee|Han-Koo|HK|', 'Hong|Young Ki|YK|', 'Kim|Sunkook|S|http://orcid.org/0000-0003-1747-4539', 'Kim|Jae-Joon|JJ|']
chemical doping multilayer MoS2 complementary inverter thin-film transistor transition-metal dichalcogenides