The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells.
In this work, we analyse the microstructure and local chemical composition of green-emitting Inx Ga1-x N/GaN quantum well (QW) heterostructures in correlation with their emission properties. Two samples of high structural quality grown by metalorganic vapour phase epitaxy (MOVPE) with a nominal composition of x = 0.15 and 0.18 indium are discussed. The local indium composition is quantitatively evaluated by comparing scanning transmission electron microscopy (STEM) images to simulations and the local indium concentration is extracted from intensity measurements. The calculations point out that the measured indium fluctuations may be correlated to the large width and intensity decrease of the PL emission peak.
['Chery|N|N|0000-0002-0305-7841', 'Ngo|T H|TH|', 'Chauvat|M P|MP|', 'Damilano|B|B|', 'Courville|A|A|', 'DE Mierry|P|P|', 'Grieb|T|T|', 'Mehrtens|T|T|', 'Krause|F F|FF|', 'Müller-Caspary|K|K|', 'Schowalter|M|M|', 'Gil|B|B|', 'Rosenauer|A|A|', 'Ruterana|P|P|']
quantum wells III-nitrides semiconductors analytical STEM green LEDs thin films