Observation of the Long Afterglow in AlN Helices.
The coupling effect between nitrogen-vacancies (VN) and aluminum-interstitial sites (Ali) is investigated theoretically and experimentally in AlN helices. First-principles calculations predict a photoluminescence emission peak at approximately 600 nm in AlN doped with complex-defect (VNAli). A typical long afterglow (persistent luminescence) was observed in unintentionally doped AlN helices by introducing the complex-defect of (VNAli). An analysis of the luminescent characteristics indicated that the mechanism behind this afterglow is the complex-defect level and complex-defect density. These findings may further enrich the thoughts of defects in the wide band gap semiconductor of AlN.
['Jin|Lei|L|', 'Zhang|Huayu|H|', 'Pan|Ruiqun|R|', 'Xu|Ping|P|', 'Han|Jiecai|J|', 'Zhang|Xinghong|X|', 'Yuan|Quan|Q|', 'Zhang|Zhihua|Z|', 'Wang|Xianjie|X|', 'Wang|Yi|Y|', 'Song|Bo|B|']
D000535:Aluminum D014961:X-Ray Diffraction
long afterglow AlN complex-defect helix