TiS3 transistors with tailored morphology and electrical properties.
Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets, which, according to density functional theory calculations, leads to an n-type doping.
['Island|Joshua O|JO|', 'Barawi|Mariam|M|', 'Biele|Robert|R|', 'Almazán|Adrián|A|', 'Clamagirand|José M|JM|', 'Ares|José R|JR|', 'Sánchez|Carlos|C|', 'van der Zant|Herre S J|HS|', 'Álvarez|José V|JV|', "D'Agosta|Roberto|R|", 'Ferrer|Isabel J|IJ|', 'Castellanos-Gomez|Andres|A|']
TiS3 morphology sulphur vacancy density functional theory exfoliation potential field-effect transistors mechanical exfoliation monolayers