The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm².
Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1-4 cm² were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays/UV-light. A linear energy response to alpha particles ranging from 5.157 to 5.805 MeV was obtained. The detectors were proved to have a low dark current, a good energy resolution, and a high neutron/gamma discrimination for pulsed radiation, showing the advantages in charged particle detection and neutron detection in high-temperature and high-radiation environments.
['Liu|Lin-Yue|LY|', 'Wang|Ling|L|', 'Jin|Peng|P|', 'Liu|Jin-Liang|JL|', 'Zhang|Xian-Peng|XP|', 'Chen|Liang|L|', 'Zhang|Jiang-Fu|JF|', 'Ouyang|Xiao-Ping|XP|', 'Liu|Ao|A|', 'Huang|Run-Hua|RH|', 'Bai|Song|S|']
Schottky diode 4H-SiC large sensitive area radiation detection