Fabrication of High-Performance Ultrathin In2O3 Film Field-Effect Transistors and Biosensors Using Chemical Lift-Off Lithography.
We demonstrate straightforward fabrication of highly sensitive biosensor arrays based on field-effect transistors, using an efficient high-throughput, large-area patterning process. Chemical lift-off lithography is used to construct field-effect transistor arrays with high spatial precision suitable for the fabrication of both micrometer- and nanometer-scale devices. Sol-gel processing is used to deposit ultrathin (∼4 nm) In2O3 films as semiconducting channel layers. The aqueous sol-gel process produces uniform In2O3 coatings with thicknesses of a few nanometers over large areas through simple spin-coating, and only low-temperature thermal annealing of the coatings is required. The ultrathin In2O3 enables construction of highly sensitive and selective biosensors through immobilization of specific aptamers to the channel surface; the ability to detect subnanomolar concentrations of dopamine is demonstrated.
['Kim|Jaemyung|J|', 'Rim|You Seung|YS|', 'Chen|Huajun|H|', 'Cao|Huan H|HH|', 'Nakatsuka|Nako|N|', 'Hinton|Hannah L|HL|', 'Zhao|Chuanzhen|C|', 'Andrews|Anne M|AM|', 'Yang|Yang|Y|', 'Weiss|Paul S|PS|']
D052157:Aptamers, Nucleotide D001483:Base Sequence D015374:Biosensing Techniques D004298:Dopamine D007204:Indium D057230:Limit of Detection D036103:Nanotechnology D011327:Printing D014173:Transistors, Electronic
field-effect transistor biosensor chemical lift-off lithography aptamer dopamine metal-oxide semiconductor nanofabrication nanotechnology neurotransmitter sensor sol−gel chemistry