Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices.
DC and pulse voltage-induced metal-insulator transition (MIT) in epitaxial VO2 two terminal devices were measured at various stage temperatures. The power needed to switch the device to the ON-state decrease linearly with increasing stage temperature, which can be explained by the Joule heating effect. During transient voltage induced MIT measurement, the incubation time varied across 6 orders of magnitude. Both DC I-V characteristic and incubation times calculated from the electrothermal simulations show good agreement with measured values, indicating Joule heating effect is the cause of MIT with no evidence of electronic effects. The width of the metallic filament in the ON-state of the device was extracted and simulated within the thermal model.
['Li|Dasheng|D|', 'Sharma|Abhishek A|AA|', 'Gala|Darshil K|DK|', 'Shukla|Nikhil|N|', 'Paik|Hanjong|H|', 'Datta|Suman|S|', 'Schlom|Darrell G|DG|', 'Bain|James A|JA|', 'Skowronski|Marek|M|']
Joule heating epitaxial thin film metal−insulator transition threshold switching vanadium dioxide