Multicolor Emission from Ultraviolet GaN-Based Photonic Quasicrystal Nanopyramid Structure with Semipolar InxGa1-xN/GaN Multiple Quantum Wells.
In this study, we demonstrated large-area high-quality multi-color emission from the 12-fold symmetric GaN photonic quasicrystal nanorod device which was fabricated using the nanoimprint lithography technology and multiple quantum wells regrowth procedure. High-efficiency blue and green color emission wavelengths of 460 and 520 nm from the regrown InxGa1-xN/GaN multiple quantum wells were observed under optical pumping conditions. To confirm the strong coupling between the quantum well emissions and the photonic crystal band-edge resonant modes, the finite-element method was applied to perform a simulation of the 12-fold symmetry photonic quasicrystal lattices.
['Chen|Cheng-Chang|CC|', 'Lin|Hsiang-Ting|HT|', 'Chang|Shih-Pang|SP|', 'Kuo|Hao-Chung|HC|', 'Hung|Hsiao-Wen|HW|', 'Chien|Kuo-Hsiang|KH|', 'Chang|Yu-Choung|YC|', 'Shih|M H|MH|']
GaN Finite-element method GaN-based LEDs Photonic quasicrystal multicolor emission