Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates.
Semiconductor strontium digermanide (SrGe2) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe2 dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe2 to high-efficiency thin-film solar cells.
['Imajo|T|T|', 'Toko|K|K|', 'Takabe|R|R|', 'Saitoh|N|N|', 'Yoshizawa|N|N|', 'Suemasu|T|T|']
Solar cells Epitaxy Germanides Nanostructures