Induced impurity photoconductivity of CdS arising from the rapid electron traps E<sub>c</sub>-0.21 eV and E<sub>c</sub>-0.43 eV
Induced impurity photoconductivity of the crystal CdS is studied within midrange of infrared light (λ=2-6 mm), which is kept in the detector perceptible level up to 350 K. Photoelectric-active traps Eс-0.21 eV and Eс-0.43 eV responsible for photoconductivity, belong to the interstitial donor Agi0 and compact associate, containing an isoelectronic acceptor А- together with the donor Agi0 (for example, an O atom in the anionic node). The trap Eс-0.43 eV has an original property: it is involved in two types of both optical and thermo-optical transitions.