Diffusion depth effects on array InGaAs/InP photodiode characteristics study
Consideration is given to an increased interrelation between the array cells. A cause of this phenomenon has been ascertained: it is a linkage of the photo-sensitive array cells due to sideways diffusion. The optimal diffusion depth of 2.5 mm and the distance between p +-areas of neighboring array cells of 1 mm have been selected, thus ensuring a minimal interrelation level without loss of detectability.